Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

RS庫存編號:: 180-7895
製造零件編號:: SI3421DV-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

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小計（1 包，共 20 件）*

TWD252.00

(不含稅)

TWD264.60

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 3,460 個，準備發貨

單位	每單位	每包*
20 - 740	TWD12.60	TWD252.00
760 - 1480	TWD12.40	TWD248.00
1500 +	TWD12.10	TWD242.00

* 參考價格

RS庫存編號:: 180-7895
製造零件編號:: SI3421DV-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	19.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	2.7W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.1mm
	Height	1.1mm
	Width	2.98 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 19.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 2.7W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.1mm
	Height 1.1mm
	Width 2.98 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• DC/DC converter

• For mobile computing/consumer

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested