Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

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包裝方式:
RS庫存編號:
180-7911
製造零件編號:
SI3585CDV-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.2nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.4W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

3.05mm

Height

1mm

Standards/Approvals

No

Width

1.65 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• DC/DC converters

• Drivers: motor, solenoid, relay

• Load switch for portable devices

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

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