Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3
- RS庫存編號:
- 812-3189
- 製造零件編號:
- SI3993CDV-T1-GE3
- 製造商:
- Vishay
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|---|---|---|
| 20 - 740 | TWD17.20 | TWD344.00 |
| 760 - 1480 | TWD16.80 | TWD336.00 |
| 1500 + | TWD16.40 | TWD328.00 |
* 參考價格
- RS庫存編號:
- 812-3189
- 製造零件編號:
- SI3993CDV-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 188mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Width | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 188mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Width 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 30V Drain Source Voltage, 2.3A Continuous Drain Current - SI3993CDV-T1-GE3
This power MOSFET is a surface-mount P-channel transistor designed for switching and load-management roles in compact electronic assemblies. It provides an isolated transistor configuration in a low-profile TSOP package and is intended for applications requiring moderate current handling and controlled gate drive within a 30V voltage environment.
Features and Benefits:
• P-channel enhancement mode enables simple high-side switching
• Peak continuous drain current 2.3A supports moderate loads
• Low Rds(on) at 188mΩ reduces conduction losses
• Typical gate charge 5.2nC enables fast gate transitions
• Maximum power dissipation 1.4W manages thermal load in small boards
• Six-pin surface-mount package allows compact PCB placement
• Peak continuous drain current 2.3A supports moderate loads
• Low Rds(on) at 188mΩ reduces conduction losses
• Typical gate charge 5.2nC enables fast gate transitions
• Maximum power dissipation 1.4W manages thermal load in small boards
• Six-pin surface-mount package allows compact PCB placement
Applications
• Suitable for battery-powered high-side switching circuits
• Ideal for DC load disconnect and reverse-current blocking
• Used with power-management modules in consumer devices
• Can be used for level-shifted gate control in compact assemblies
• Ideal for DC load disconnect and reverse-current blocking
• Used with power-management modules in consumer devices
• Can be used for level-shifted gate control in compact assemblies
What gate drive constraints should I consider?
The device accepts up to ±20V between gate and source, so gate-drive circuitry must keep Vgs within that range to prevent gate stress.
How tolerant is it to temperature extremes during operation?
It operates across a wide temperature span from -55°C to 150°C, permitting use in environments with severe thermal variation.
How many transistor elements does the die include and what is the package pin count?
The chip integrates two elements and the package presents six pins for board connections.
What is the maximum drain-source voltage and how does that influence circuit design?
The MOSFET is rated to 30V between drain and source, so it should be used where supply rails and transient conditions remain below that threshold.
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