Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP
- RS庫存編號:
- 180-7282
- 製造零件編號:
- SI3585CDV-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD24,000.00
(不含稅)
TWD25,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月21日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD8.00 | TWD24,000.00 |
| 6000 + | TWD7.70 | TWD23,100.00 |
* 參考價格
- RS庫存編號:
- 180-7282
- 製造零件編號:
- SI3585CDV-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 1.65 mm | |
| Height | 1mm | |
| Length | 3.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 1.65 mm | ||
Height 1mm | ||
Length 3.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC converters
• Drivers: motor, solenoid, relay
• Load switch for portable devices
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
相關連結
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- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin TSOP
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