製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP

RS庫存編號:: 228-2815
製造零件編號:: Si3129DV-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD25,800.00

(不含稅)

TWD27,090.00

訂單超過 $1,300.00 免費送貨

有庫存

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD8.60	TWD25,800.00
15000 +	TWD8.40	TWD25,200.00

* 參考價格

RS庫存編號:: 228-2815
製造零件編號:: Si3129DV-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	80V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	82.7mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	4.2W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 80V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 82.7mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 4.2W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet - Si3129DV-T1-GE3

The Vishay TrenchFET P-Channel power MOSFET is use for Power management of portable and consumer load switch and DC/DC converters.

100 % Rg and UIS tested

Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP

訂單超過 $1,300.00 免費送貨

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