Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3
- RS庫存編號:
- 165-6917
- 製造零件編號:
- SI3477DV-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 165-6917
- 製造零件編號:
- SI3477DV-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.2W | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | -10V, +10V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.2W | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs -10V, +10V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.7mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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