Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- RS庫存編號:
- 279-9936
- 製造零件編號:
- SIJ4819DP-T1-GE3
- 製造商:
- Vishay
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TWD391.20
(不含稅)
TWD410.76
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年6月29日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 56 | TWD97.80 | TWD391.20 |
| 60 - 96 | TWD88.80 | TWD355.20 |
| 100 - 236 | TWD79.00 | TWD316.00 |
| 240 - 996 | TWD77.50 | TWD310.00 |
| 1000 + | TWD75.80 | TWD303.20 |
* 參考價格
- RS庫存編號:
- 279-9936
- 製造零件編號:
- SIJ4819DP-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8L | |
| Series | SIJ | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0207Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 73.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8L | ||
Series SIJ | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0207Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 73.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Less voltage drop
Reduces conduction loss
Fully lead (Pb)-free device
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