Vishay Type P-Channel MOSFET, 13.6 A, -30 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
252-0245
製造零件編號:
SI4155DY-T1-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13.6A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5.6W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

相關連結