Vishay Type P-Channel MOSFET, 20.5 A, -30 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 252-0243
- 製造零件編號:
- SI4151DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD52,500.00
(不含稅)
TWD55,140.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 6000 | TWD17.50 | TWD52,500.00 |
| 9000 + | TWD17.00 | TWD51,000.00 |
* 參考價格
- RS庫存編號:
- 252-0243
- 製造零件編號:
- SI4151DY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.5A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.5A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.
TrenchFET power MOSFET
100 % Rg and UIS tested
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