Vishay Type P-Channel MOSFET, 20.5 A, -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3
- RS庫存編號:
- 252-0244
- 製造零件編號:
- SI4151DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD243.00
(不含稅)
TWD255.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 7,475 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD48.60 | TWD243.00 |
| 50 - 95 | TWD46.20 | TWD231.00 |
| 100 - 245 | TWD43.60 | TWD218.00 |
| 250 - 995 | TWD40.40 | TWD202.00 |
| 1000 + | TWD37.00 | TWD185.00 |
* 參考價格
- RS庫存編號:
- 252-0244
- 製造零件編號:
- SI4151DY-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 20.5A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5.6W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 20.5A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5.6W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.
TrenchFET power MOSFET
100 % Rg and UIS tested
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