製造零件編號

Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3

RS庫存編號:: 279-9966
製造零件編號:: SIRS4401DP-T1-GE3
製造商:: Vishay

Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD176,400.00

(不含稅)

TWD185,220.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
3000 +	TWD58.80	TWD176,400.00

* 參考價格

RS庫存編號:: 279-9966
製造零件編號:: SIRS4401DP-T1-GE3
製造商:: Vishay

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	198A
	Maximum Drain Source Voltage Vds	40V
	Series	SIRS
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0022Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	588nC
	Maximum Power Dissipation Pd	132W
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 198A
	Maximum Drain Source Voltage Vds 40V
	Series SIRS
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0022Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 588nC
	Maximum Power Dissipation Pd 132W
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIRS4401DP-T1-GE3

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3

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