製造零件編號

Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

RS庫存編號:: 279-9969
製造零件編號:: SIRS4600DP-T1-RE3
製造商:: Vishay

Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

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TWD153.00

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TWD160.65

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單位	每單位
1 - 49	TWD153.00
50 - 99	TWD114.00
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250 - 999	TWD100.00
1000 +	TWD97.00

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RS庫存編號:: 279-9969
製造零件編號:: SIRS4600DP-T1-RE3
製造商:: Vishay

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	334A
	Maximum Drain Source Voltage Vds	60V
	Series	SIRS
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00115Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	162nC
	Maximum Power Dissipation Pd	240W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 334A
	Maximum Drain Source Voltage Vds 60V
	Series SIRS
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00115Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 162nC
	Maximum Power Dissipation Pd 240W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5mm
	Automotive Standard No

Datasheet - SIRS4600DP-T1-RE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Reduces switching related power loss

Fully lead (Pb)-free device

Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

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