Vishay SIRS N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3
- RS庫存編號:
- 279-9968
- 製造零件編號:
- SIRS4600DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD250,500.00
(不含稅)
TWD263,040.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD83.50 | TWD250,500.00 |
* 參考價格
- RS庫存編號:
- 279-9968
- 製造零件編號:
- SIRS4600DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 334A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIRS | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00115Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 240W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 334A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIRS | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00115Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 240W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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