Vishay SiR N channel-Channel MOSFET, 359 A, 60 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4600DP
- RS庫存編號:
- 735-137
- 製造零件編號:
- SiRS4600DP
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD177.00
(不含稅)
TWD185.85
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD177.00 |
| 10 - 49 | TWD110.00 |
| 50 - 99 | TWD85.00 |
| 100 + | TWD82.00 |
* 參考價格
- RS庫存編號:
- 735-137
- 製造零件編號:
- SiRS4600DP
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 359A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8S | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00115Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Forward Voltage Vf | 60V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6mm | |
| Height | 2mm | |
| Width | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 359A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8S | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00115Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Forward Voltage Vf 60V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6mm | ||
Height 2mm | ||
Width 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, designed for ultra-low loss switching in AI power server applications and high-current DC/DC converters. It features industry-leading on-resistance of 1.2mΩ maximum at 10V gate drive to maximize efficiency in synchronous rectification topologies.
334A continuous drain current at TC=25°C
Low RDS(on) x Qg figure-of-merit for optimal switching efficiency
100% Rg and UIS tested for reliability
相關連結
- Vishay SiR N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4300DP
- Vishay SiR N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP
- Vishay SiR N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4302DP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5100DP
- Vishay SiR N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4400DP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR512DP
- Vishay SiR N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP
- Vishay SiR N channel-Channel MOSFET 25 V Enhancement, 8-Pin PowerPAK SO-8 SiRA20DDP