Vishay SiR N channel-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP
- RS庫存編號:
- 735-135
- 製造零件編號:
- SiR580DP
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD80.00
(不含稅)
TWD84.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD80.00 |
| 10 - 24 | TWD52.00 |
| 25 + | TWD27.00 |
* 參考價格
- RS庫存編號:
- 735-135
- 製造零件編號:
- SiR580DP
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 146A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0027Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 80V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 7mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Height | 2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 146A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiR | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0027Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 80V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Maximum Operating Temperature 150°C | ||
Length 7mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel power MOSFET rated for 80V drain-source voltage, Ideal for high-efficiency switching in AI power server and DC/DC converter applications. It delivers ultra-low on-resistance of 2.7mΩ maximum at 10V gate drive to minimize conduction losses under heavy loads.
146A continuous drain current at TC=25°C
76nC maximum total gate charge
-55°C to +150°C operating junction temperature
相關連結
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3
- Vishay SiR N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP
- Vishay SiR N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR512DP
- Vishay SiR N channel-Channel MOSFET 25 V Enhancement, 8-Pin PowerPAK SO-8 SiRA20DDP
- Vishay SiR N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SiR500DP
- Vishay SiR N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SiR638ADP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR510DP