Vishay SiR N channel-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiR638ADP

N
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TWD84.00

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TWD88.20

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1 - 9TWD84.00
10 - 24TWD55.00
25 +TWD52.00

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RS庫存編號:
735-146
製造零件編號:
SiR638ADP
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

40V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

6mm

Height

2mm

Length

7mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, optimized for high power density DC/DC converters in AI server applications. It delivers ultra-low on-resistance of 0.88mΩ maximum at 10V gate drive for superior conduction efficiency in synchronous rectification circuits.

147S forward trans conductance

110nC total gate charge at 10V VGS

Qgd/Qgs ratio less than 1 for optimized switching

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