Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR512DP

N
可享批量折扣

小計(1 件)*

TWD92.00

(不含稅)

TWD96.60

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年12月21日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
1 - 9TWD92.00
10 - 24TWD60.00
25 +TWD31.00

* 參考價格

RS庫存編號:
735-131
製造零件編號:
SiR512DP
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

96.2W

Forward Voltage Vf

100V

Typical Gate Charge Qg @ Vgs

41nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Width

6mm

Height

2mm

Standards/Approvals

RoHS

Length

7mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel TrenchFET Gen V power MOSFET designed for efficient power management in AI server solutions and high-current applications. It delivers 100V drain-source voltage capability with a low on-resistance of 4.5 mΩ at 10V gate drive for minimal power loss.

00A continuous drain current at TC=25°C

96.2W power dissipation rating

-55°C to +150°C operating temperature range

相關連結