Vishay SiR N channel-Channel MOSFET, 241 A, 100 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5100DP

N
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小計(1 件)*

TWD152.00

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TWD159.60

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1 - 9TWD152.00
10 - 49TWD94.00
50 - 99TWD73.00
100 +TWD70.00

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RS庫存編號:
735-162
製造零件編號:
SiRS5100DP
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

241A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8S

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0025Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

68nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5mm

Standards/Approvals

RoHS

Height

2mm

Length

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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