Vishay SiR N channel-Channel MOSFET, 680 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4300DP
- RS庫存編號:
- 735-147
- 製造零件編號:
- SiRS4300DP
- 製造商:
- Vishay
N
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小計（1 件）*
TWD152.00
(不含稅)
TWD159.60
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD152.00 |
| 10 - 49 | TWD95.00 |
| 50 - 99 | TWD73.00 |
| 100 + | TWD49.00 |
* 參考價格
- RS庫存編號:
- 735-147
- 製造零件編號:
- SiRS4300DP
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 680A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8S | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0004Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 30V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Height | 2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 680A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiR | ||
Package Type PowerPAK SO-8S | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0004Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 30V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFET rated for 30V drain-source voltage, engineered for ultra-low loss synchronous rectification in AI power server buck converters and high-current power delivery systems. It achieves exceptionally low on-resistance of 400μΩ at 10V gate drive to maximize efficiency in extreme high-density applications.
278W power dissipation rating
100% Rg and UIS tested construction
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