Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-096
- 製造零件編號:
- SIRS4300DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
TWD99.00
(不含稅)
TWD103.95
(含稅)
添加 14 組 件可免費送貨
有庫存
- 加上 5,984 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD99.00 |
| 10 - 24 | TWD96.00 |
| 25 - 99 | TWD94.00 |
| 100 - 499 | TWD81.00 |
| 500 + | TWD76.00 |
* 參考價格
- RS庫存編號:
- 653-096
- 製造零件編號:
- SIRS4300DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 680A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRS4300DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00040Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.10 mm | |
| Height | 0.95mm | |
| Length | 6.10mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 680A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRS4300DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00040Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.10 mm | ||
Height 0.95mm | ||
Length 6.10mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
相關連結
- Vishay SIRS4300DP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRS4300DP-T1-RE3
- Vishay SIRS5700DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5812DP Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5702DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5702DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIRS5702DP-T1-RE3
- Vishay SIRS5700DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIRS5700DP-T1-RE3
- Vishay SIR5812DP Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3
- Vishay SIRA14DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK