Vishay SIRS5700DP Type N-Channel Single MOSFETs, 144 A, 150 V Enhancement, 8-Pin PowerPAK SIRS5700DP-T1-RE3
- RS庫存編號:
- 653-128
- 製造零件編號:
- SIRS5700DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD240,000.00
(不含稅)
TWD252,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD80.00 | TWD240,000.00 |
* 參考價格
- RS庫存編號:
- 653-128
- 製造零件編號:
- SIRS5700DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 144A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK | |
| Series | SIRS5700DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0056Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 144A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK | ||
Series SIRS5700DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0056Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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