Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR5102DP

N
可享批量折扣
查看批量定價選項

小計(1 件)*

TWD140.00

(不含稅)

TWD147.00

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
1 - 9TWD140.00
10 - 49TWD87.00
50 - 99TWD67.00
100 +TWD64.00

* 參考價格

RS庫存編號:
735-165
製造零件編號:
SiR5102DP
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0041Ω

Channel Mode

Enhancement

Forward Voltage Vf

100V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

33.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Length

7mm

Height

2mm

Standards/Approvals

RoHS

Width

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。