Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3
- RS庫存編號:
- 279-9961
- 製造零件編號:
- SIRS4301DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD287.00
(不含稅)
TWD301.36
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD143.50 | TWD287.00 |
| 50 - 98 | TWD140.00 | TWD280.00 |
| 100 - 248 | TWD130.00 | TWD260.00 |
| 250 - 998 | TWD126.50 | TWD253.00 |
| 1000 + | TWD124.50 | TWD249.00 |
* 參考價格
- RS庫存編號:
- 279-9961
- 製造零件編號:
- SIRS4301DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0015Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 548nC | |
| Maximum Power Dissipation Pd | 132W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0015Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 548nC | ||
Maximum Power Dissipation Pd 132W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Enhance power dissipation and lower RthJC
Fully lead (Pb)-free device
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