Vishay SIRS Type N-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3
- RS庫存編號:
- 279-9973
- 製造零件編號:
- SIRS5800DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD269.00
(不含稅)
TWD282.44
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年1月26日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD134.50 | TWD269.00 |
| 50 - 98 | TWD101.00 | TWD202.00 |
| 100 - 248 | TWD90.00 | TWD180.00 |
| 250 - 998 | TWD88.50 | TWD177.00 |
| 1000 + | TWD87.00 | TWD174.00 |
* 參考價格
- RS庫存編號:
- 279-9973
- 製造零件編號:
- SIRS5800DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 265A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0018Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 265A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0018Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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