Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8 SIRA99DP-T1-GE3
- RS庫存編號:
- 188-5097
- 製造零件編號:
- SIRA99DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD408.00
(不含稅)
TWD428.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,560 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD81.60 | TWD408.00 |
| 750 - 1495 | TWD79.60 | TWD398.00 |
| 1500 + | TWD78.60 | TWD393.00 |
* 參考價格
- RS庫存編號:
- 188-5097
- 製造零件編號:
- SIRA99DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SiRA99DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 172.5nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SiRA99DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 172.5nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Length 5.99mm | ||
Width 5 mm | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Very low RDS(on) minimizes voltage drop and reduces conduction loss
Eliminates the need for charge pump
相關連結
- Vishay SiRA99DP Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay SIRS Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3
- Vishay Type N 8 A 8-Pin SO-8 SI4534DY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3