Vishay SIJ Type N-Channel MOSFET, 59 A, 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3
- RS庫存編號:
- 279-9931
- 製造零件編號:
- SIJ4106DP-T1-GE3
- 製造商:
- Vishay
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TWD361.20
(不含稅)
TWD379.28
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 5,980 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 56 | TWD90.30 | TWD361.20 |
| 60 - 96 | TWD67.50 | TWD270.00 |
| 100 - 236 | TWD60.30 | TWD241.20 |
| 240 - 996 | TWD59.00 | TWD236.00 |
| 1000 + | TWD58.00 | TWD232.00 |
* 參考價格
- RS庫存編號:
- 279-9931
- 製造零件編號:
- SIJ4106DP-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIJ | |
| Package Type | SO-8L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0083Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69.4W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIJ | ||
Package Type SO-8L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0083Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69.4W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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