製造零件編號

Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3

RS庫存編號:: 279-9935
製造零件編號:: SIJ4819DP-T1-GE3
製造商:: Vishay

Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD100,800.00

(不含稅)

TWD105,840.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
3000 +	TWD33.60	TWD100,800.00

* 參考價格

RS庫存編號:: 279-9935
製造零件編號:: SIJ4819DP-T1-GE3
製造商:: Vishay

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	44.4A
	Maximum Drain Source Voltage Vds	80V
	Package Type	SO-8L
	Series	SIJ
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	0.0207Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	73.5W
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.13mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 44.4A
	Maximum Drain Source Voltage Vds 80V
	Package Type SO-8L
	Series SIJ
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 0.0207Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 73.5W
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.13mm
	Automotive Standard No

Datasheet - SIJ4819DP-T1-GE3

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3

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