Vishay SiJA Type N-Channel MOSFET, 126 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- RS庫存編號:
- 268-8323
- 製造零件編號:
- SiJA54ADP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD371.00
(不含稅)
TWD389.55
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,050 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD74.20 | TWD371.00 |
| 50 - 95 | TWD66.80 | TWD334.00 |
| 100 - 245 | TWD53.60 | TWD268.00 |
| 250 + | TWD52.80 | TWD264.00 |
* 參考價格
- RS庫存編號:
- 268-8323
- 製造零件編號:
- SiJA54ADP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | SiJA | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0023Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series SiJA | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0023Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It has flexible leads which provide resilience to mechanical stress. It is used an application as synchronous rectification, dc or ac inverters.
Optimizes switching characteristics
ROHS compliant
UIS tested 100 percent
相關連結
- Vishay SiJA Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- Vishay Type N-Channel MOSFET 80 V PowerPAK SO-8L SIJ482DP-T1-GE3
- Vishay Type N-Channel MOSFET 80 V PowerPAK SO-8L
- Vishay SIJ Type P-Channel MOSFET 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- Vishay SIJ Type N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3
- Vishay SIJ Type N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3
- Vishay Type N-Channel MOSFET 30 V PowerPAK SO-8 SIRA10DP-T1-GE3
- Vishay Type N-Channel MOSFET 100 V PowerPAK SO-8 SIR698DP-T1-GE3
