Vishay TrenchFET Type N-Channel MOSFET, 225 A, 100 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH112E-T1-GE3
- RS庫存編號:
- 228-2893
- 製造零件編號:
- SIJH112E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 228-2893
- 製造零件編號:
- SIJH112E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 225A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK (8x8L) | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0028Ω | |
| Channel Mode | Enhancement | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 225A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK (8x8L) | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0028Ω | ||
Channel Mode Enhancement | ||
The Vishay TrenchFET N-channel is 100 V MOSFET.
100 % Rg and UIS tested
相關連結
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH602E-T1-GE3
- Vishay SIJH Type N-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS54DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3