Vishay TrenchFET N channel-Channel MOSFET, 437 A, 60 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH602E-T1-GE3
- RS庫存編號:
- 735-199
- 製造零件編號:
- SIJH602E-T1-GE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 件）*
TWD208.00
(不含稅)
TWD218.40
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD208.00 |
| 10 - 49 | TWD129.00 |
| 50 - 99 | TWD100.00 |
| 100 + | TWD67.00 |
* 參考價格
- RS庫存編號:
- 735-199
- 製造零件編號:
- SIJH602E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 437A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK (8x8L) | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00115Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 7.9mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 437A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK (8x8L) | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00115Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 7.9mm | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
相關連結
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH112E-T1-GE3
- Vishay SIJH Type N-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 12 V Enhancement, 8-Pin PowerPAK 1212 SISF12EDN-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS54DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3