Vishay SIJH N-Channel MOSFET, 174 A, 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- RS庫存編號:
- 268-8324
- 製造零件編號:
- SIJH5700E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
抱歉，我們不知道何時會到貨。
- RS庫存編號:
- 268-8324
- 製造零件編號:
- SIJH5700E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SIJH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0041Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 7.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK (8x8L) | ||
Series SIJH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0041Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 7.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is fully lead Pb free device. It is used in applications such as synchronous rectification, motor drive control, battery management.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
相關連結
- Vishay SIJH Type N-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- Vishay SIJH Type N-Channel MOSFET 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH602E-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH112E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SI7120BDN-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 6-Pin PowerPAK SIA4620DJ-T1-GE3