製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8

RS庫存編號:: 228-2818
製造零件編號:: Si4056ADY-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD29,250.00

(不含稅)

TWD30,700.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,500 個，準備發貨

單位	每單位	每卷*
2500 - 10000	TWD11.70	TWD29,250.00
12500 +	TWD11.30	TWD28,250.00

* 參考價格

RS庫存編號:: 228-2818
製造零件編號:: Si4056ADY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.3A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	29.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19.2nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.3A
	Maximum Drain Source Voltage Vds 100V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 29.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19.2nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - Si4056ADY-T1-GE3

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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