製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8

RS庫存編號:: 165-7074
製造零件編號:: SIRA06DP-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD42,600.00

(不含稅)

TWD44,730.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月20日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD14.20	TWD42,600.00
6000 - 9000	TWD13.80	TWD41,400.00
12000 +	TWD13.40	TWD40,200.00

* 參考價格

RS庫存編號:: 165-7074
製造零件編號:: SIRA06DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.73V
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Standards/Approvals	No
	Width	5.26 mm
	Length	6.25mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.73V
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Standards/Approvals No
	Width 5.26 mm
	Length 6.25mm
	Automotive Standard No

Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

相關連結