製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 18.7 A, 100 V Enhancement, 8-Pin SO-8

RS庫存編號:: 228-2820
製造零件編號:: Si4090BDY-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 18.7 A, 100 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD64,500.00

(不含稅)

TWD67,740.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月13日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD21.50	TWD64,500.00
15000 +	TWD21.10	TWD63,300.00

* 參考價格

RS庫存編號:: 228-2820
製造零件編號:: Si4090BDY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18.7A
	Maximum Drain Source Voltage Vds	100V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	46.5nC
	Maximum Power Dissipation Pd	7.4W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18.7A
	Maximum Drain Source Voltage Vds 100V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 46.5nC
	Maximum Power Dissipation Pd 7.4W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - Si4090BDY-T1-GE3

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 18.7 A, 100 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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