Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 178-3670
- 製造零件編號:
- SiDR392DP-T1-GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD137,400.00
(不含稅)
TWD144,270.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD45.80 | TWD137,400.00 |
| 15000 + | TWD44.40 | TWD133,200.00 |
* 參考價格
- RS庫存編號:
- 178-3670
- 製造零件編號:
- SiDR392DP-T1-GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Width | 5 mm | |
| Length | 5.99mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Width 5 mm | ||
Length 5.99mm | ||
Automotive Standard No | ||
豁免
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
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