Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

RS庫存編號:: 178-3962
製造零件編號:: SiS110DN-T1-GE3
製造商:: Vishay Siliconix

Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

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小計（1 包，共 25 件）*

TWD442.50

(不含稅)

TWD464.50

訂單超過 $1,300.00 免費送貨

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從 2026年11月02日發貨

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單位	每單位	每包*
25 +	TWD17.70	TWD442.50

* 參考價格

RS庫存編號:: 178-3962
製造零件編號:: SiS110DN-T1-GE3
製造商:: Vishay Siliconix

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay Siliconix
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14.2A
	Maximum Drain Source Voltage Vds	100V
	Series	SiS110DN
	Package Type	PowerPAK 1212
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	24W
	Maximum Operating Temperature	150°C
	Length	3.15mm
	Standards/Approvals	RoHS
	Height	1.07mm
	Width	3.15mm
	Automotive Standard	No

	選取全部
	品牌 Vishay Siliconix
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14.2A
	Maximum Drain Source Voltage Vds 100V
	Series SiS110DN
	Package Type PowerPAK 1212
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 24W
	Maximum Operating Temperature 150°C
	Length 3.15mm
	Standards/Approvals RoHS
	Height 1.07mm
	Width 3.15mm
	Automotive Standard No

Datasheet

豁免

COO (Country of Origin):: CN

Vishay Siliconix SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3

This n-channel MOSFET is a surface-mount switching transistor designed for power conversion and control applications in industrial systems. It operates as an enhancement-mode device capable of handling moderate to high voltages and currents, providing efficient switching in Compact surface-mount assemblies.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching applications • 14.2A continuous drain current supports substantial load currents • 70mΩ Rds(on) minimises conduction losses during operation • 8.5nC gate charge reduces switching energy and drive requirements • 24W power dissipation manages thermal load in confined layouts • 150°C maximum junction temperature allows elevated operating conditions

Applications

• Suitable for DC-DC converter switching stages in automation equipment • Ideal for motor-drive half-bridge circuits in factory systems • Used for power management in industrial control units • Can be used for load switching in electrical distribution modules

What mounting style does it require for assembly?

It is supplied in a Compact PowerPAK 1212 surface-mount package designed for soldered PCB assembly and low-profile board layouts.

How wide a temperature range can it tolerate in service?

It is rated for operation from -55°C ambient to a 150°C maximum junction temperature, permitting use in environments with substantial thermal variation.

What gate voltage limits should designers observe?

The device permits gate-source voltages up to 20V

designs should ensure the gate drive stays within this constraint to protect the gate oxide.

How many pins does the package present for circuit integration?

The package includes eight pins to accommodate drain, source and gate connections and to aid thermal and electrical routing on the PCB.

Is this part specified for automotive use?

It is not designated to automotive standards and should not be chosen where automotive-grade qualification is mandatory.