Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 178-3693
- 製造零件編號:
- SiS110DN-T1-GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD29,700.00
(不含稅)
TWD31,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月02日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD9.90 | TWD29,700.00 |
| 6000 + | TWD9.60 | TWD28,800.00 |
* 參考價格
- RS庫存編號:
- 178-3693
- 製造零件編號:
- SiS110DN-T1-GE3
- 製造商:
- Vishay Siliconix
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212 | |
| Series | SiS110DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 24W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Standards/Approvals | RoHS | |
| Width | 3.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212 | ||
Series SiS110DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 24W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Height 1.07mm | ||
Standards/Approvals RoHS | ||
Width 3.15mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
Vishay Siliconix SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3
This n-channel MOSFET is a surface-mount switching transistor designed for power conversion and control applications in industrial systems. It operates as an enhancement-mode device capable of handling moderate to high voltages and currents, providing efficient switching in Compact surface-mount assemblies.
Features and Benefits:
• 100V drain-source rating enables high-voltage switching applications • 14.2A continuous drain current supports substantial load currents • 70mΩ Rds(on) minimises conduction losses during operation • 8.5nC gate charge reduces switching energy and drive requirements • 24W power dissipation manages thermal load in confined layouts • 150°C maximum junction temperature allows elevated operating conditions
Applications
• Suitable for DC-DC converter switching stages in automation equipment • Ideal for motor-drive half-bridge circuits in factory systems • Used for power management in industrial control units • Can be used for load switching in electrical distribution modules
What mounting style does it require for assembly?
It is supplied in a Compact PowerPAK 1212 surface-mount package designed for soldered PCB assembly and low-profile board layouts.
How wide a temperature range can it tolerate in service?
It is rated for operation from -55°C ambient to a 150°C maximum junction temperature, permitting use in environments with substantial thermal variation.
What gate voltage limits should designers observe?
The device permits gate-source voltages up to 20V
designs should ensure the gate drive stays within this constraint to protect the gate oxide.
How many pins does the package present for circuit integration?
The package includes eight pins to accommodate drain, source and gate connections and to aid thermal and electrical routing on the PCB.
Is this part specified for automotive use?
It is not designated to automotive standards and should not be chosen where automotive-grade qualification is mandatory.
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