Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

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RS庫存編號:
165-2807
製造零件編號:
SISA04DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-16V, +20V

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

730mV

Maximum Operating Temperature

150°C

Width

3.15mm

Length

3.15mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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