Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3
- RS庫存編號:
- 228-2916
- 製造零件編號:
- SIRA20BDP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD287.00
(不含稅)
TWD301.35
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,980 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD57.40 | TWD287.00 |
| 50 - 95 | TWD55.60 | TWD278.00 |
| 100 - 245 | TWD54.40 | TWD272.00 |
| 250 - 995 | TWD52.60 | TWD263.00 |
| 1000 + | TWD51.00 | TWD255.00 |
* 參考價格
- RS庫存編號:
- 228-2916
- 製造零件編號:
- SIRA20BDP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 335A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 335A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 25 V MOSFET.
100 % Rg and UIS tested
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