製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

RS庫存編號:: 787-9389
製造零件編號:: SIRA14DP-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 組，共 10 件）*

TWD176.00

(不含稅)

TWD184.80

訂單超過 $1,300.00 免費送貨

有庫存

2,000 件準備從其他地點送貨

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單位	每單位	每膠帶*
10 - 740	TWD17.60	TWD176.00
750 - 1490	TWD17.10	TWD171.00
1500 +	TWD16.80	TWD168.00

* 參考價格

RS庫存編號:: 787-9389
製造零件編號:: SIRA14DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19.4nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.76V
	Maximum Power Dissipation Pd	31.2W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.25mm
	Width	5.26 mm
	Height	1.12mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19.4nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.76V
	Maximum Power Dissipation Pd 31.2W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.25mm
	Width 5.26 mm
	Height 1.12mm
	Automotive Standard No

Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

訂單超過 $1,300.00 免費送貨

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