Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3
- RS庫存編號:
- 787-9389
- 製造零件編號:
- SIRA14DP-T1-GE3
- 製造商:
- Vishay
可享批量折扣
小計（1 組，共 10 件）*
TWD176.00
(不含稅)
TWD184.80
(含稅)
添加 80 件 件可免費送貨
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- 加上 2,000 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 740 | TWD17.60 | TWD176.00 |
| 750 - 1490 | TWD17.10 | TWD171.00 |
| 1500 + | TWD16.80 | TWD168.00 |
* 參考價格
- RS庫存編號:
- 787-9389
- 製造零件編號:
- SIRA14DP-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Maximum Power Dissipation Pd | 31.2W | |
| Forward Voltage Vf | 0.76V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Width | 5.26 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Maximum Power Dissipation Pd 31.2W | ||
Forward Voltage Vf 0.76V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Height 1.12mm | ||
Width 5.26 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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