Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8 Si4056ADY-T1-GE3

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TWD233.00

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TWD244.60

(含稅)

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10 - 40TWD23.30TWD233.00
50 - 90TWD22.90TWD229.00
100 - 240TWD22.10TWD221.00
250 - 990TWD21.70TWD217.00
1000 +TWD20.90TWD209.00

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包裝方式:
RS庫存編號:
228-2819
製造零件編號:
Si4056ADY-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.3A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.2nC

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.75mm

Automotive Standard

No

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

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