Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363
- RS庫存編號:
- 180-7265
- 製造零件編號:
- SI1411DH-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD45,000.00
(不含稅)
TWD47,250.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD15.00 | TWD45,000.00 |
| 15000 + | TWD14.50 | TWD43,500.00 |
* 參考價格
- RS庫存編號:
- 180-7265
- 製造零件編號:
- SI1411DH-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.52A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | TrenchFET | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.52A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series TrenchFET | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.
Small, thermally enhanced SC-70 package
Ultra low on-resistance
Pb-free
Halogen free
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