製造零件編號

Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

RS庫存編號:: 735-212
製造零件編號:: SI2301HDS-T1-GE3
製造商:: Vishay

Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

可享批量折扣

小計（1 件）*

TWD5.00

(不含稅)

TWD5.25

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年3月10日發貨

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單位	每單位
1 - 24	TWD5.00
25 +	TWD3.00

* 參考價格

RS庫存編號:: 735-212
製造零件編號:: SI2301HDS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	P-Channel
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-3.1A
	Maximum Drain Source Voltage Vds	-20V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.142Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.6W
	Typical Gate Charge Qg @ Vgs	5.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±8 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type P-Channel
	Product Type MOSFET
	Maximum Continuous Drain Current Id -3.1A
	Maximum Drain Source Voltage Vds -20V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.142Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.6W
	Typical Gate Charge Qg @ Vgs 5.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±8 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - SI2301HDS-T1-GE3

COO (Country of Origin):: IL

Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

訂單超過 $1,300.00 免費送貨

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