製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 165-7181
製造零件編號:: SI2337DS-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD53,400.00

(不含稅)

TWD56,070.00

訂單超過 $1,300.00 免費送貨

正在逐步停售

最終 15,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD17.80	TWD53,400.00
15000 +	TWD17.40	TWD52,200.00

* 參考價格

RS庫存編號:: 165-7181
製造零件編號:: SI2337DS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.2A
	Maximum Drain Source Voltage Vds	80V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.303Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21
	Length	3.04mm
	Height	1.02mm
	Width	1.4 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.2A
	Maximum Drain Source Voltage Vds 80V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.303Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21
	Length 3.04mm
	Height 1.02mm
	Width 1.4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

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