製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3

RS庫存編號:: 812-3139
製造零件編號:: SI2365EDS-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 50 件）*

TWD205.00

(不含稅)

TWD215.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 53,500 個，準備發貨

單位	每單位	每包*
50 - 700	TWD4.10	TWD205.00
750 - 1450	TWD4.00	TWD200.00
1500 +	TWD3.90	TWD195.00

* 參考價格

RS庫存編號:: 812-3139
製造零件編號:: SI2365EDS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.9A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.0675Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Forward Voltage Vf	-0.8V
	Maximum Power Dissipation Pd	1.7W
	Typical Gate Charge Qg @ Vgs	13.8nC
	Minimum Operating Temperature	-50°C
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	RoHS
	Width	1.4 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.9A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.0675Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Forward Voltage Vf -0.8V
	Maximum Power Dissipation Pd 1.7W
	Typical Gate Charge Qg @ Vgs 13.8nC
	Minimum Operating Temperature -50°C
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals RoHS
	Width 1.4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3

訂單超過 $1,300.00 免費送貨

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

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