Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

RS庫存編號:: 180-7898
製造零件編號:: SI1401EDH-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

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可享批量折扣

小計（1 包，共 25 件）*

TWD222.50

(不含稅)

TWD233.50

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,900 個，準備發貨

單位	每單位	每包*
25 - 725	TWD8.90	TWD222.50
750 - 1475	TWD8.70	TWD217.50
1500 +	TWD8.60	TWD215.00

* 參考價格

RS庫存編號:: 180-7898
製造零件編號:: SI1401EDH-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	12V
	Package Type	SOT-363
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14.1nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	10 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	2.2mm
	Width	2.4 mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 12V
	Package Type SOT-363
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14.1nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 10 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 2.2mm
	Width 2.4 mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications

• Cellular phone

• DSC

• GPS

• Load switch

• MP3

• PA switch and battery switch for portable devices

• Portable game console

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested