Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3
- RS庫存編號:
- 814-1213
- 製造零件編號:
- SIA449DJ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD260.00
(不含稅)
TWD273.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,920 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD13.00 | TWD260.00 |
| 760 - 1480 | TWD12.60 | TWD252.00 |
| 1500 + | TWD12.40 | TWD248.00 |
* 參考價格
- RS庫存編號:
- 814-1213
- 製造零件編號:
- SIA449DJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.038Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23.1nC | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.15mm | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.038Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23.1nC | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 2.15mm | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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