Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363

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RS庫存編號:
180-7264
製造零件編號:
SI1401EDH-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

12V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

14.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

1.8W

Maximum Operating Temperature

150°C

Width

2.4 mm

Height

1.1mm

Length

2.2mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications


• Cellular phone

• DSC

• GPS

• Load switch

• MP3

• PA switch and battery switch for portable devices

• Portable game console

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

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