製造零件編號

Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363

RS庫存編號:: 165-7182
製造零件編號:: SIA449DJ-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363

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RS庫存編號:: 165-7182
製造零件編號:: SIA449DJ-T1-GE3
製造商:: Vishay

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.038Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	-0.8V
	Maximum Power Dissipation Pd	19W
	Typical Gate Charge Qg @ Vgs	23.1nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	2.15mm
	Height	0.8mm
	Width	2.15 mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.038Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf -0.8V
	Maximum Power Dissipation Pd 19W
	Typical Gate Charge Qg @ Vgs 23.1nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 2.15mm
	Height 0.8mm
	Width 2.15 mm
	Standards/Approvals RoHS
	Automotive Standard No

COO (Country of Origin):: CN

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