Vishay Isolated TrenchFET 2 Type P, Type P-Channel MOSFET, 135 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1025X-T1-GE3
- RS庫存編號:
- 165-6899
- 製造零件編號:
- SI1025X-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 165-6899
- 製造零件編號:
- SI1025X-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Transistor Configuration | Isolated | |
| Series | TrenchFET | |
| Number of Elements per Chip | 2 | |
| Channel Type | Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 135 mA | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 6 | |
| Package Type | SC-89-6 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | -1.4 V | |
| Height | 600 μm | |
| Length | 1.7 mm | |
| Maximum Drain Source Resistance (Rds) | 8 Ω | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 250 mW | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 1.7 nC | |
| Width | 1.2 mm | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Transistor Configuration Isolated | ||
Series TrenchFET | ||
Number of Elements per Chip 2 | ||
Channel Type Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 135 mA | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 6 | ||
Package Type SC-89-6 | ||
Automotive Standard No | ||
Forward Voltage (Vf) -1.4 V | ||
Height 600 μm | ||
Length 1.7 mm | ||
Maximum Drain Source Resistance (Rds) 8 Ω | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 250 mW | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 1.7 nC | ||
Width 1.2 mm | ||
- COO (Country of Origin):
- PH
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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